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| APTGT50A120T Phase leg Fast Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area 100A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT50A120T - Rev 0 Max ratings 1200 75 50 100 20 277 Unit V May, 2005 A V W APTGT50A120T All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 500 2.1 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 18 Min Typ 3600 190 160 90 30 420 70 90 50 520 90 5 5.5 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V 50% duty cycle IF = 50A IF = 50A VR = 600V di/dt =2000A/s 50 1.4 1.3 150 250 4.5 9 1.9 V ns C May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT50A120T - Rev 0 APTGT50A120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.58 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 2500 -40 -40 -40 1.5 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTGT50A120T - Rev 0 May, 2005 APTGT50A120T Typical Performance Curve 100 80 TJ=125C Output Characteristics (VGE =15V) T J=25C Output Characteristics 100 TJ = 125C 80 IC (A) 60 40 20 0 V GE=17V VGE=13V V GE=15V VGE=9V IC (A) 60 40 20 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 0 1 2 VCE (V) 3 4 Transfert Characteristics 100 80 60 40 20 0 5 6 7 8 9 10 11 12 V GE (V) Switching Energy Losses vs Gate Resistance 12 10 E (mJ) 8 6 4 2 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 VCE = 600V VGE =15V IC = 50A TJ = 125C TJ =25C TJ =125C Energy losses vs Collector Current 12 10 8 E (mJ) 6 4 VCE = 600V VGE = 15V RG = 18 TJ = 125C Eon IC (A) Eon Er Eoff T J=125C 2 0 0 20 40 IC (A) Reverse Bias Safe Operating Area 120 Eon 60 80 100 100 80 IC (A) Eoff 60 40 20 0 0 300 600 900 V CE (V) 1200 1500 VGE =15V TJ=125C RG=18 Er maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 0.0001 0.001 0.9 0.7 IGBT Single Pulse 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT50A120T - Rev 0 May, 2005 APTGT50A120T Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 IC (A) 60 70 80 hard switching ZCS ZVS VCE=600V D=50% RG=18 TJ=125C TC=75C Forward Characteristic of diode 150 125 100 IC (A) 75 50 25 0 0 0.5 1 1.5 VF (V) 2 2.5 TJ=125C TJ=125C TJ=25C maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Diode 0 0.00001 rectangular Pulse Duration (Seconds) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT50A120T - Rev 0 May, 2005 |
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